FQA47P06
MOSFET P-CH 60V 55A TO3PManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® series FQA47P06 is a P-Channel MOSFET designed for demanding power applications. Featuring a Drain-Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) of 55A at 25°C, this component offers robust performance. Its low on-resistance of 26mOhm at 27.5A and 10V drive voltage, coupled with a maximum power dissipation of 214W (Tc), makes it suitable for power switching and control circuits. The device utilizes Metal Oxide technology and has a typical Gate Charge (Qg) of 110 nC at 10 V with input capacitance (Ciss) peaking at 3600 pF. Encased in a TO-3P package for through-hole mounting and operating across a temperature range of -55°C to 175°C (TJ), the FQA47P06 is commonly found in industrial and high-power systems.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 27.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |
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