FQA46N15
MOSFET N-CH 150V 50A TO3PManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQA46N15 is a QFET® series N-Channel Power MOSFET designed for high-efficiency switching applications. This device offers a drain-source voltage (Vdss) of 150 V and a continuous drain current (Id) of 50 A at 25°C (Tc), with a maximum power dissipation of 250 W (Tc). Key performance characteristics include a low on-resistance (Rds On) of 42 mOhm at 25 A and 10 V, and a gate charge (Qg) of 110 nC at 10 V. The input capacitance (Ciss) is rated at 3250 pF maximum at 25 V. The FQA46N15 utilizes through-hole mounting in a TO-3P package and operates across a temperature range of -55°C to 175°C (TJ). This component is suitable for use in power supply, motor control, and industrial automation applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3250 pF @ 25 V |
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