FQA44N30
MOSFET N-CH 300V 43.5A TO3PNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQA44N30 is a QFET® series N-Channel power MOSFET in a TO-3PN package. This device features a Drain-Source Voltage (Vdss) of 300 V and a continuous Drain Current (Id) of 43.5 A at 25°C (Tc), with a maximum power dissipation of 310 W (Tc). The Rds On is specified at a maximum of 69 mOhm at 21.75 A and 10 V gate drive. With a gate charge (Qg) of 150 nC at 10 V and input capacitance (Ciss) of 5600 pF at 25 V, this component is suitable for applications in power supply, motor control, and lighting. It supports a gate-source voltage range of ±30 V and operates within an extended temperature range of -55°C to 150°C.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 43.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 69mOhm @ 21.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5600 pF @ 25 V |
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