FQA44N08
MOSFET N-CH 80V 49.8A TO3PManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQA44N08 is an N-Channel power MOSFET designed for high-performance switching applications. Featuring an 80V drain-source voltage (Vdss) and a continuous drain current capability of 49.8A (Tc @ 25°C), this component offers a low on-resistance of 34mOhm at 24.9A and 10V gate drive. Its typical application includes power supply units, motor control, and automotive systems. The device is housed in a TO-3P package, supporting efficient heat dissipation with a maximum power dissipation of 163W (Tc). Key electrical parameters include a gate charge (Qg) of 50 nC @ 10V and input capacitance (Ciss) of 1430 pF @ 25V. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 49.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 24.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 163W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1430 pF @ 25 V |
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