FQA34N20
MOSFET N-CH 200V 34A TO3PManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi's FQA34N20 is an N-Channel QFET® MOSFET designed for power switching applications. This component features a drain-source voltage (Vdss) of 200 V and a continuous drain current (Id) of 34 A at 25°C (Tc), with a maximum power dissipation of 210 W (Tc). The Rds On is specified at a maximum of 75 mOhm at 17 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 78 nC at 10 V and input capacitance (Ciss) of 3100 pF at 25 V. The device utilizes Metal Oxide technology and is housed in a TO-3P package with through-hole mounting. Operating temperature range is from -55°C to 150°C (TJ). This component is suitable for use in power supply, motor control, and lighting applications.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 17A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 210W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 25 V |
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