FQA33N10L
MOSFET N-CH 100V 36A TO3PManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQA33N10L is a high-performance N-Channel Power MOSFET designed for demanding applications. This through-hole component features a 100V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) rating of 36A at 25°C. The FQA33N10L offers a low on-resistance of 52mOhm maximum at 18A and 10V, with a gate charge (Qg) of 40 nC maximum at 5V. Its maximum power dissipation is 163W at the case temperature. The device is packaged in a TO-3P-3, SC-65-3 (also referred to as TO-3P) for robust thermal management. Key operating parameters include a gate-source voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 2V maximum at 250µA. This MOSFET is suitable for use in power supply designs, motor control, and general switching applications across various industrial sectors.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 163W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1630 pF @ 25 V |
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