FQA33N10
MOSFET N-CH 100V 36A TO3PManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FQA33N10 is an N-Channel Power MOSFET from the QFET® series, packaged in a TO-3P through-hole configuration. This device features a maximum drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) capability of 36 A at 25°C (Tc). The on-resistance (Rds On) is specified at 52 mOhm maximum at 18 A and 10 V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 51 nC maximum at 10 V Vgs and an input capacitance (Ciss) of 1500 pF maximum at 25 V Vds. The device offers a maximum power dissipation of 163 W (Tc) and operates within a temperature range of -55°C to 175°C (TJ). This component finds application in power supply units, motor control, and general-purpose power switching in various industrial and automotive systems.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 163W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 25 V |
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