FQA30N40
MOSFET N-CH 400V 30A TO3PNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQA30N40 is a QFET® series N-Channel Power MOSFET designed for high-performance applications. This through-hole component features a drain-source voltage (Vdss) of 400 V and a continuous drain current (Id) of 30 A at 25°C (Tc). It offers a low on-resistance (Rds On) of 140 mOhm maximum at 15 A and 10 V gate drive. With a maximum power dissipation of 290 W (Tc), this MOSFET is suitable for demanding power management tasks. Key parameters include a gate charge (Qg) of 120 nC maximum at 10 V and an input capacitance (Ciss) of 4400 pF maximum at 25 V. The FQA30N40 is packaged in a TO-3PN (TO-3P-3, SC-65-3) for robust thermal management. This component finds application in power supplies, motor control, and lighting systems.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 290W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 25 V |
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