FQA28N15
MOSFET N-CH 150V 33A TO3PNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQA28N15 is an N-Channel power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 150V and a continuous Drain Current (Id) of 33A at 25°C, with a maximum power dissipation of 227W (Tc). The on-resistance (Rds On) is specified at a maximum of 90mOhm at 16.5A and 10V gate drive. Key parameters include a gate charge (Qg) of 52 nC (max) at 10V and input capacitance (Ciss) of 1600 pF (max) at 25V. The FQA28N15 utilizes MOSFET technology and is housed in a TO-3PN package, suitable for through-hole mounting. It operates across a temperature range of -55°C to 175°C (TJ). This component is commonly found in power supply, motor control, and industrial automation systems.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 16.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 227W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3PN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
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