FQA27N25
MOSFET N-CH 250V 27A TO3PNManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi's FQA27N25 is an N-Channel Power MOSFET from the QFET® series. This component offers a drain-source voltage (Vdss) of 250 V and a continuous drain current (Id) of 27A at 25°C, with a maximum power dissipation of 210W (Tc). Key electrical characteristics include a low on-resistance (Rds On) of 110mOhm at 13.5A and 10V, and a gate charge (Qg) of 65 nC at 10V. Input capacitance (Ciss) is specified at 2450 pF at 25V. The device features a maximum gate-source voltage (Vgs) of ±30V and a threshold voltage (Vgs(th)) of 5V at 250µA. Supplied in a TO-3PN package, the FQA27N25 is suitable for through-hole mounting and operates across a temperature range of -55°C to 150°C. This MOSFET is utilized in various industrial applications requiring high voltage and robust switching capabilities.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 13.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 210W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2450 pF @ 25 V |
Request a Quote
Clients Also Buy
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
