FQA19N20L
MOSFET N-CH 200V 25A TO3PManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQA19N20L is a robust N-Channel Power MOSFET designed for demanding applications. Featuring a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 25A at 25°C, this component offers 190W of power dissipation. The TO-3P package facilitates through-hole mounting. Key specifications include a low Rds On of 140mOhm at 12.5A and 10V, and a Gate Charge (Qg) of 35 nC at 5V. Input Capacitance (Ciss) is rated at 2200 pF at 25V. Operating temperature ranges from -55°C to 150°C. This device is commonly utilized in power supply units, motor control, and industrial automation.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 12.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 25 V |
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