FQA19N20C
MOSFET N-CH 200V 21.8A TO3PManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi QFET® FQA19N20C is a 200V N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a low on-resistance of 170mOhm at 10.9A and 10V Vgs, contributing to reduced conduction losses. With a continuous drain current of 21.8A (Tc) and a maximum power dissipation of 180W (Tc), it is suitable for demanding power management tasks. The FQA19N20C offers a gate charge of 53 nC at 10V and an input capacitance (Ciss) of 1080 pF at 25V. Packaged in a TO-3P-3 (SC-65-3) through-hole configuration, this MOSFET operates across a temperature range of -55°C to 150°C. Its robust design makes it applicable in power supplies, motor control, and lighting applications.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 10.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1080 pF @ 25 V |
Request a Quote
Clients Also Buy
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
