FQA17P10
MOSFET P-CH 100V 18A TO3PManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi's QFET® FQA17P10 is a P-Channel MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 100 V and continuous drain current (Id) capability of 18 A at 25°C. With a maximum power dissipation of 120 W (Tc), it is suitable for demanding power management tasks. The device exhibits a typical Rds On of 190 mOhm at 9 A and 10 V, and a gate charge (Qg) of 39 nC at 10 V. Input capacitance (Ciss) is rated at 1100 pF at 25 V. The FQA17P10 is housed in a standard TO-3P package, facilitating through-hole mounting. Operating temperature range is from -55°C to 175°C (TJ). This MOSFET is commonly utilized in industrial power supplies, motor control, and audio amplifiers.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V |
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