FQA170N06
MOSFET N-CH 60V 170A TO3PNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® series MOSFET, part number FQA170N06, is an N-Channel power MOSFET designed for high-current applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 170A at 25°C (Tc). The device exhibits a low on-resistance of 5.6mOhm maximum at 85A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 290 nC at 10V and an Input Capacitance (Ciss) of 9350 pF at 25V. With a maximum power dissipation of 375W (Tc), this MOSFET is suitable for demanding power conversion and management tasks. It is supplied in a TO-3PN package for through-hole mounting and operates across a temperature range of -55°C to 175°C (TJ). This component finds application in industrial and automotive power systems.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 170A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 85A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3PN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 290 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9350 pF @ 25 V |