FQA13N50C-F109
MOSFET N-CH 500V 13.5A TO3PManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQA13N50C-F109 is a QFET® series N-Channel Power MOSFET designed for high-voltage applications. This through-hole component features a Drain-Source Voltage (Vdss) of 500V and a continuous drain current (Id) of 13.5A at 25°C with a maximum power dissipation of 218W. With a low Rds(On) of 480mOhm at 10V Vgs and 6.75A Id, it offers efficient switching performance. Key parameters include a gate charge (Qg) of 56 nC at 10V and input capacitance (Ciss) of 2055 pF at 25V. The TO-3P package is suitable for demanding environments with an operating temperature range of -55°C to 150°C. This device finds application in power supply units, lighting, and motor control systems.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 6.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 218W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2055 pF @ 25 V |
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