FQA13N50
MOSFET N-CH 500V 13.4A TO3PManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi QFET® FQA13N50 is a 500V N-Channel power MOSFET designed for high-efficiency power conversion applications. This through-hole component in a TO-3P package offers a continuous drain current of 13.4A (Tc) and a maximum power dissipation of 190W (Tc). Key parameters include a low Rds On of 430mOhm at 6.7A, 10V, a gate charge of 60 nC at 10V, and input capacitance (Ciss) of 2300 pF at 25V. The FQA13N50 is suitable for use in power supply units, motor control, and lighting applications. It operates across a wide temperature range from -55°C to 150°C.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 430mOhm @ 6.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 25 V |
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