FQA10N80C-F109
MOSFET N-CH 800V 10A TO3PManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi QFET® FQA10N80C-F109 is an N-Channel Power MOSFET designed for high voltage applications. This through-hole TO-3P packaged component offers a drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 10A at 25°C, with a maximum power dissipation of 240W at the same temperature. Key electrical characteristics include a low on-resistance (Rds On) of 1.1 Ohm at 5A and 10V, and a gate charge (Qg) of 58 nC at 10V. The operating temperature range is -55°C to 150°C. This MOSFET is suitable for power supply, lighting, and industrial motor control applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 240W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 25 V |