Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

FDZ661PZ

Banner
productimage

FDZ661PZ

MOSFET P-CH 20V 2.6A 4WLCSP

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi PowerTrench® FDZ661PZ is a P-Channel PowerTrench® MOSFET in a 4-WLCSP (0.8x0.8) package. This device features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 2.6A at 25°C, with a maximum power dissipation (Pd) of 1.3W (Ta). The Rds(on) is specified at 140mOhm maximum at 2A, 4.5V. Drive voltages range from 1.5V to 4.5V. Key parameters include a gate charge (Qg) of 8.8 nC maximum at 4.5V and input capacitance (Ciss) of 555 pF maximum at 10V. The operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in consumer electronics and power management applications.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case4-XFBGA, WLCSP
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2.6A (Ta)
Rds On (Max) @ Id, Vgs140mOhm @ 2A, 4.5V
FET Feature-
Power Dissipation (Max)1.3W (Ta)
Vgs(th) (Max) @ Id1.2V @ 250µA
Supplier Device Package4-WLCSP (0.8x0.8)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds555 pF @ 10 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
FDN338P

MOSFET P-CH 20V 1.6A SUPERSOT3

product image
FDG6332C

MOSFET N/P-CH 20V 0.7A SC88

product image
FDC6420C

MOSFET N/P-CH 20V 3A/2.2A SSOT6