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FDZ493P

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FDZ493P

MOSFET P-CH 20V 4.6A 9BGA

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDZ493P is a P-Channel PowerTrench® MOSFET designed for high-density power management applications. This device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 4.6A at 25°C. With a maximum power dissipation of 1.7W (Ta), it is suitable for use in portable electronics, power supplies, and battery management systems. The FDZ493P offers a low on-resistance (Rds On) of 46mOhm at 4.6A and 4.5V, minimizing conduction losses. It operates with gate drive voltages from 2.5V to 4.5V and has a gate charge (Qg) of 11 nC at 4.5V. The component is packaged in a compact 9-BGA (1.55x1.55) with a Tape & Reel (TR) configuration, ideal for automated assembly. Operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case9-WFBGA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C4.6A (Ta)
Rds On (Max) @ Id, Vgs46mOhm @ 4.6A, 4.5V
FET Feature-
Power Dissipation (Max)1.7W (Ta)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device Package9-BGA (1.55x1.55)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds754 pF @ 10 V

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