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FDZ391P

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FDZ391P

MOSFET P-CH 20V 3A 6WLCSP

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi's FDZ391P is a P-Channel PowerTrench® MOSFET in a 6-WL-CSP Thin (1x1.5) package, designed for efficient power management. This device features a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 3A at 25°C, with a maximum power dissipation of 1.9W. The Rds On is specified at 85mOhm maximum at 1A, 4.5V, and the gate drive voltage ranges from 1.5V to 4.5V. Key parameters include a maximum gate charge (Qg) of 13 nC at 4.5V and input capacitance (Ciss) of 1065 pF at 10V. Operating across a temperature range of -55°C to 150°C, the FDZ391P is suitable for applications in consumer electronics and portable devices requiring compact, high-performance switching solutions.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-XFBGA, WLCSP
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Rds On (Max) @ Id, Vgs85mOhm @ 1A, 4.5V
FET Feature-
Power Dissipation (Max)1.9W (Ta)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device Package6-WL-CSP Thin (1x1.5)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1065 pF @ 10 V

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