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FDZ375P

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FDZ375P

MOSFET P-CH 20V 3.7A 4WLCSP

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi P-Channel PowerTrench® MOSFET, part number FDZ375P, offers a 20V drain-source breakdown voltage and a continuous drain current capability of 3.7A at 25°C. This device features a maximum on-resistance of 78mOhm at 2A and 4.5V Vgs. Designed for efficient power management, it operates with gate drive voltages ranging from 1.5V to 4.5V. The FDZ375P is packaged in a compact 4-WLCSP (1x1) format, suitable for surface mounting and demanding space-constrained applications. Key electrical characteristics include a maximum gate charge of 15 nC at 4.5V Vgs and an input capacitance of 865 pF at 10V Vds. This component is engineered for reliable performance across an operating temperature range of -55°C to 150°C. The FDZ375P is commonly utilized in consumer electronics, portable devices, and power management solutions.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case4-XFBGA, WLCSP
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C3.7A (Ta)
Rds On (Max) @ Id, Vgs78mOhm @ 2A, 4.5V
FET Feature-
Power Dissipation (Max)1.7W (Ta)
Vgs(th) (Max) @ Id1.2V @ 250µA
Supplier Device Package4-WLCSP (1x1)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds865 pF @ 10 V

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