FDZ299P
MOSFET P-CH 20V 4.6A 9BGAManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDZ299P is a P-Channel PowerTrench® MOSFET designed for demanding applications requiring efficient power switching. This device features a 20V Drain-Source voltage rating and a continuous drain current capability of 4.6A at 25°C. The Rds(On) is specified at a maximum of 55mOhm at 4.6A and 4.5V Vgs. With a gate charge (Qg) of 9 nC at 4.5V, it offers optimized switching performance. Input capacitance (Ciss) is rated at 742 pF maximum at 10V Vds. The FDZ299P utilizes a 9-BGA (2x2.1) package, suitable for high-density surface mount designs, and supports drive voltages between 2.5V and 4.5V. Operating temperature ranges from -55°C to 150°C. This MOSFET is commonly found in power management solutions across various industries.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 9-WFBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 4.6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.7W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 9-BGA (2x2.1) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 742 pF @ 10 V |
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