Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

FDZ298N

Banner
productimage

FDZ298N

MOSFET N-CH 20V 6A 9BGA

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDZ298N is an N-Channel PowerTrench® MOSFET designed for high-efficiency switching applications. This device features a Vds of 20V and a continuous drain current (Id) of 6A at 25°C with a maximum power dissipation of 1.7W. The Rds(On) is specified at a maximum of 27mOhm at 6A and 4.5V Vgs. It has a gate charge (Qg) of 10 nC at 4.5V Vgs and an input capacitance (Ciss) of 680 pF at 10V Vds. The FDZ298N operates with drive voltages between 2.5V and 4.5V and supports a Vgs(th) of 1.5V at 250µA. This component is housed in a compact 9-BGA (1.5x1.6) package, suitable for surface mounting. The operating temperature range is -55°C to 150°C. Industries utilizing this MOSFET include consumer electronics and power management.

Additional Information

Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case9-WFBGA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Rds On (Max) @ Id, Vgs27mOhm @ 6A, 4.5V
FET Feature-
Power Dissipation (Max)1.7W (Ta)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device Package9-BGA (1.5x1.6)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds680 pF @ 10 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
FDN338P

MOSFET P-CH 20V 1.6A SUPERSOT3

product image
FDG6332C

MOSFET N/P-CH 20V 0.7A SC88

product image
FDC6420C

MOSFET N/P-CH 20V 3A/2.2A SSOT6