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FDZ293P

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FDZ293P

MOSFET P-CH 20V 4.6A 9BGA

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi FDZ293P is a P-Channel PowerTrench® MOSFET designed for high-efficiency power management applications. This device features a Drain-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 4.6A at 25°C ambient temperature. The on-resistance (Rds On) is specified at a maximum of 46mOhm at 4.6A and 4.5V gate-source voltage. The MOSFET offers a low gate charge (Qg) of 11 nC at 4.5V Vgs and an input capacitance (Ciss) of 754 pF at 10V Vds. Operating across a temperature range of -55°C to 150°C (TJ), the FDZ293P is supplied in a compact 9-BGA (1.5x1.6) package, suitable for surface mounting. This component finds application in portable electronics, consumer electronics, and automotive systems requiring robust power switching capabilities. The device supports drive voltages from 2.5V to 4.5V and has a maximum gate-source voltage of ±12V. The maximum power dissipation is 1.7W at ambient temperature.

Additional Information

Series: PowerTrench®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case9-VFBGA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C4.6A (Ta)
Rds On (Max) @ Id, Vgs46mOhm @ 4.6A, 4.5V
FET Feature-
Power Dissipation (Max)1.7W (Ta)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device Package9-BGA (1.5x1.6)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds754 pF @ 10 V

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