FDZ291P
MOSFET P-CH 20V 4.6A 9BGAManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDZ291P is a P-Channel PowerTrench® MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain current (Id) of 4.6A at 25°C, with a maximum power dissipation of 1.7W. Key electrical characteristics include a low Rds(on) of 40mOhm at 4.6A and 4.5V Vgs, and a gate charge (Qg) of 13nC at 4.5V. Input capacitance (Ciss) is 1010pF max at 10V. The MOSFET supports drive voltages from 1.5V to 4.5V and has a Vgs(th) of 1V at 250µA, with a maximum Vgs of ±8V. Operating temperature range is -55°C to 150°C. The component is housed in a compact 9-VFBGA (1.5x1.6) package, supplied on tape and reel. This device is suitable for power management solutions across various industries.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 9-VFBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 4.6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.7W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 9-BGA (1.5x1.6) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1010 pF @ 10 V |
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