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FDZ203N

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FDZ203N

MOSFET N-CH 20V 7.5A 9BGA

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDZ203N is an N-Channel PowerTrench® MOSFET designed for efficient power management applications. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 7.5A at 25°C ambient temperature, with a maximum power dissipation of 1.6W. The FDZ203N offers a low on-resistance of 18mOhm at 7.5A and 4.5V Vgs, facilitated by a gate drive voltage range of 2.5V to 4.5V. It exhibits a typical input capacitance (Ciss) of 1127 pF at 10V Vds and a gate charge (Qg) of 15 nC at 4.5V Vgs. Packaged in a compact 9-BGA (2x2.1) configuration and supplied on tape and reel, this MOSFET is suitable for surface mounting. The operating temperature range is -55°C to 150°C. Applications include power supplies, battery management, and portable electronics.

Additional Information

Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case9-WFBGA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7.5A (Ta)
Rds On (Max) @ Id, Vgs18mOhm @ 7.5A, 4.5V
FET Feature-
Power Dissipation (Max)1.6W (Ta)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device Package9-BGA (2x2.1)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1127 pF @ 10 V

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