FDZ202P
MOSFET P-CH 20V 5.5A 12BGAManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDZ202P is a P-Channel PowerTrench® MOSFET designed for efficient power management applications. This device features a Drain-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 5.5A at 25°C, with a maximum power dissipation of 2W. The Rds(On) is specified at a maximum of 45mOhm at 5.5A and 4.5V Vgs. Key characteristics include a Gate Charge (Qg) of 13 nC at 4.5V and an Input Capacitance (Ciss) of 884 pF at 10V. The MOSFET is available in a 12-BGA (2x2.5) package, suitable for surface mounting, and operates across a temperature range of -55°C to 150°C. This component is utilized in industries such as automotive and consumer electronics where robust power switching is required.
Additional Information
Series: PowerTrench®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 12-WFBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 5.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 12-BGA (2x2.5) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 884 pF @ 10 V |