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FDZ202P

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FDZ202P

MOSFET P-CH 20V 5.5A 12BGA

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDZ202P is a P-Channel PowerTrench® MOSFET designed for efficient power management applications. This device features a Drain-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 5.5A at 25°C, with a maximum power dissipation of 2W. The Rds(On) is specified at a maximum of 45mOhm at 5.5A and 4.5V Vgs. Key characteristics include a Gate Charge (Qg) of 13 nC at 4.5V and an Input Capacitance (Ciss) of 884 pF at 10V. The MOSFET is available in a 12-BGA (2x2.5) package, suitable for surface mounting, and operates across a temperature range of -55°C to 150°C. This component is utilized in industries such as automotive and consumer electronics where robust power switching is required.

Additional Information

Series: PowerTrench®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case12-WFBGA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C5.5A (Ta)
Rds On (Max) @ Id, Vgs45mOhm @ 5.5A, 4.5V
FET Feature-
Power Dissipation (Max)2W (Ta)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device Package12-BGA (2x2.5)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds884 pF @ 10 V

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