FDZ192NZ
MOSFET N-CH 20V 6-WLCSPManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi's FDZ192NZ is an N-Channel Power Trench® MOSFET designed for high-efficiency switching applications. This device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 5.3A at 25°C, with a low on-resistance (Rds On) of 39mOhm at 2A and 4.5V Vgs. The FDZ192NZ utilizes a compact 6-WLCSP (1x1.5) package, ideal for space-constrained designs. Key parameters include a maximum gate charge (Qg) of 17 nC at 4.5V and input capacitance (Ciss) of 1220 pF at 10V. The MOSFET operates across a temperature range of -55°C to 150°C. This component is commonly found in consumer electronics and portable device power management.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UFBGA, WLCSP |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 6-WLCSP (1x1.5) |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1220 pF @ 10 V |
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