FDZ191P
MOSFET P-CH 20V 3A 6WLCSPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi's FDZ191P, a P-Channel PowerTrench® MOSFET, offers a 20V drain-source breakdown voltage and a continuous drain current capability of 3A at 25°C. This device features a low Rds(on) of 85mOhm maximum at 1A, 4.5V, with a gate threshold voltage of 1.5V maximum. The FDZ191P is suitable for applications requiring efficient power switching, characterized by its 1.9W power dissipation in a compact 6-WLCSP (1x1.5) package. Key parameters include a gate charge of 13nC maximum and an input capacitance of 800pF maximum. Operating across a junction temperature range of -55°C to 150°C, this MOSFET is utilized in consumer electronics and industrial automation.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UFBGA, WLCSP |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 1A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 6-WLCSP (1x1.5) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 10 V |
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