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FDY302NZ

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FDY302NZ

MOSFET N-CH 20V 600MA SC89-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDY302NZ is an N-Channel PowerTrench® MOSFET designed for surface-mount applications. This component features a 20V drain-source breakdown voltage and a continuous drain current capability of 600mA at 25°C. With a maximum Rds(On) of 300mOhm at 600mA and 4.5V Vgs, it offers efficient switching. The device has a gate charge (Qg) of 1.1 nC at 4.5V and input capacitance (Ciss) of 60 pF at 10V. The SC-89-3 (SOT-490) package allows for a maximum power dissipation of 625mW. Drive voltages range from 1.8V to 4.5V. This MOSFET is suitable for use in portable electronics, power management, and general switching applications. It operates over a temperature range of -55°C to 150°C. The FDY302NZ is supplied in Tape & Reel packaging.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-89, SOT-490
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C600mA (Ta)
Rds On (Max) @ Id, Vgs300mOhm @ 600mA, 4.5V
FET Feature-
Power Dissipation (Max)625mW (Ta)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device PackageSC-89-3
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs1.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds60 pF @ 10 V

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