FDY101PZ
MOSFET P-CH 20V 150MA SC89-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDY101PZ is a P-Channel PowerTrench® MOSFET designed for efficient power management applications. This device features a Drain-to-Source Voltage (Vdss) of 20 V and a continuous Drain Current (Id) of 150mA at 25°C (Ta). With a maximum power dissipation of 625mW (Ta) and a low on-resistance (Rds On) of 8 Ohms at 150mA and 4.5V, it offers effective switching performance. The gate threshold voltage (Vgs(th)) is 1.5V at 250µA, with drive voltages ranging from 1.5V to 4.5V. Key parameters include a gate charge (Qg) of 1.4 nC at 4.5V and input capacitance (Ciss) of 100 pF at 10V. The FDY101PZ is housed in an SC-89-3 (SOT-490) surface-mount package, supplied on tape and reel. This component is suitable for use in areas such as consumer electronics and industrial automation.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-89, SOT-490 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 150mA (Ta) |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 150mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 625mW (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SC-89-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 100 pF @ 10 V |
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