FDY100PZ-G
MOSFET P-CH SC89Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FDY100PZ-G is a P-Channel PowerTrench® MOSFET designed for surface mount applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 350mA at 25°C ambient. With a maximum Rds(on) of 1.2 Ohms at 350mA and 4.5V Vgs, it offers efficient power switching. The device has a maximum power dissipation of 446mW in an SC-89 package (SOT-523F). Key parameters include a gate charge of 1.4 nC at 4.5V and input capacitance of 100 pF at 10V. Operating temperature ranges from -55°C to 150°C. This MOSFET is suitable for use in various applications including consumer electronics and battery management.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-89, SOT-490 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 350mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 350mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 446mW (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | SOT-523F |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 100 pF @ 10 V |
Request a Quote
Clients Also Buy
FDN338P
MOSFET P-CH 20V 1.6A SUPERSOT3
FDG6332C
MOSFET N/P-CH 20V 0.7A SC88
FDC6420C
MOSFET N/P-CH 20V 3A/2.2A SSOT6
