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FDWS9511L-F085

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FDWS9511L-F085

MOSFET P-CH 40V 30A 8DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDWS9511L-F085 is a P-Channel MOSFET designed for efficient power management applications. This component features a 40V drain-source voltage rating and supports a continuous drain current of 30A (Tc) at 25°C. Its low on-resistance of 20.5mOhm is achieved at 30A and 10V gate-source voltage, contributing to reduced conduction losses. The device is housed in an 8-DFN (5.1x6.3) package, suitable for surface mounting and offering a maximum power dissipation of 68.2W (Tc). Key parameters include a gate charge of 18nC (Max) at 10V and an input capacitance of 1200pF (Max) at 20V. Operating across a temperature range of -55°C to 175°C, this MOSFET is utilized in industries such as automotive and industrial power systems. The FDWS9511L-F085 is supplied on tape and reel.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs20.5mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)68.2W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-DFN (5.1x6.3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1200 pF @ 20 V

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