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FDWS9510L-F085

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FDWS9510L-F085

MOSFET P-CH 40V 50A 8DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi PowerTrench® FDWS9510L-F085 is a P-Channel MOSFET with a drain-source voltage (Vdss) of 40V. This device features a continuous drain current (Id) of 50A at 25°C (Tc) and a maximum power dissipation of 75W (Tj). With a low on-resistance (Rds On) of 13.5mOhm at 50A and 10V, it is designed for efficient power switching applications. The gate charge (Qg) is 37 nC at 10V, and input capacitance (Ciss) is 2320 pF at 20V. The FDWS9510L-F085 is housed in an 8-DFN (5.1x6.3) package, suitable for surface mounting, and operates across a temperature range of -55°C to 175°C (Tj). This component is utilized in industries such as consumer electronics and industrial automation.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Rds On (Max) @ Id, Vgs13.5mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)75W (Tj)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-DFN (5.1x6.3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2320 pF @ 20 V

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