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FDWS9509L-F085

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FDWS9509L-F085

MOSFET P-CH 40V 65A 8DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDWS9509L-F085 is a P-Channel PowerTrench® MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 65A at 25°C (Tc), with a maximum power dissipation of 107W (Tj). Its low on-resistance (Rds On) of 8mOhm at 65A and 10V gate-source voltage ensures efficient power transfer. The MOSFET utilizes a surface mount 8-DFN (5.1x6.3) package, identified as 8-PowerTDFN, and is supplied on tape and reel (TR). Key parameters include a gate charge (Qg) of 67 nC at 10V and input capacitance (Ciss) of 3360 pF at 20V. The device operates across a temperature range of -55°C to 175°C (TJ) and is AEC-Q101 qualified, making it suitable for automotive and industrial sectors. Drive voltage ranges from 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±16V.

Additional Information

Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C65A (Tc)
Rds On (Max) @ Id, Vgs8mOhm @ 65A, 10V
FET Feature-
Power Dissipation (Max)107W (Tj)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-DFN (5.1x6.3)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3360 pF @ 20 V
QualificationAEC-Q101

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