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FDWS9408-F085

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FDWS9408-F085

MOSFET N-CH 40V 80A POWER56

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDWS9408-F085 is a 40V N-Channel Power MOSFET designed for high-current applications. This component features a low Rds(on) of 1.8mOhm at 80A and 10V Vgs, enabling efficient power delivery. With a continuous drain current capability of 80A (Tc) and a maximum power dissipation of 214W (Tj), it is suitable for demanding thermal management environments. The device exhibits an input capacitance (Ciss) of 5150 pF at 20V Vds and a gate charge (Qg) of 92 nC at 10V Vgs, facilitating effective switching characteristics. The FDWS9408-F085 is available in an 8-PowerTDFN package, a surface mount configuration ideal for automated assembly. Its operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly utilized in power management, automotive, and industrial applications requiring robust power switching.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs1.8mOhm @ 80A, 10V
FET Feature-
Power Dissipation (Max)214W (Tj)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackagePower56
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5150 pF @ 20 V

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