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FDW256P

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FDW256P

MOSFET P-CH 30V 8A 8TSSOP

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDW256P is a P-Channel PowerTrench® MOSFET designed for efficient power switching applications. This device features a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 8A at 25°C (Ta). It offers a low on-resistance (Rds On) of a maximum 13.5mOhm at 8A and 10V Vgs. Key electrical characteristics include a gate charge (Qg) of 38 nC at 5V Vgs and an input capacitance (Ciss) of 2267 pF at 15V Vds. The FDW256P is housed in an 8-TSSOP package for surface mounting and operates within a temperature range of -55°C to 150°C (TJ). Its power dissipation is rated at 1.3W (Ta). This MOSFET is commonly utilized in computing, industrial, and automotive sectors.

Additional Information

Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-TSSOP (0.173"", 4.40mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C8A (Ta)
Rds On (Max) @ Id, Vgs13.5mOhm @ 8A, 10V
FET Feature-
Power Dissipation (Max)1.3W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-TSSOP
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs38 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds2267 pF @ 15 V

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