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FDW254PZ

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FDW254PZ

MOSFET P-CH 20V 9.2A 8TSSOP

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDW254PZ is a P-Channel PowerTrench® MOSFET designed for efficient power switching. This device features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 9.2A at 25°C, with a maximum power dissipation of 1.4W. Its low on-resistance (Rds On) of 12mOhm at 9.2A and 4.5V gate drive makes it suitable for applications requiring minimal conduction losses. The MOSFET is housed in an 8-TSSOP package, facilitating surface mounting. Key characteristics include a gate charge (Qg) of 96 nC at 4.5V and input capacitance (Ciss) of 5880 pF at 10V. The operating temperature range is -55°C to 150°C. This component finds utility in various industrial sectors, including consumer electronics and communication systems.

Additional Information

Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-TSSOP (0.173"", 4.40mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C9.2A (Ta)
Rds On (Max) @ Id, Vgs12mOhm @ 9.2A, 4.5V
FET Feature-
Power Dissipation (Max)1.4W (Ta)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device Package8-TSSOP
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs96 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds5880 pF @ 10 V

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