FDW254P
MOSFET P-CH 20V 9.2A 8TSSOPManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDW254P is a P-Channel PowerTrench® MOSFET designed for efficient power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 9.2A at 25°C. With a maximum Rds(on) of 12mOhm at 9.2A and 4.5V, it offers low conduction losses. The MOSFET is housed in an 8-TSSOP package, suitable for surface mounting. Key parameters include a Gate Charge (Qg) of 96 nC at 4.5V, an Input Capacitance (Ciss) of 5878 pF at 10V, and a maximum power dissipation of 1.3W. Operating temperature ranges from -55°C to 150°C. This component is utilized in various industries including consumer electronics and industrial automation.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 9.2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-TSSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 96 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5878 pF @ 10 V |
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