Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

FDV304P-F169

Banner
productimage

FDV304P-F169

P-CHANNEL DIGITAL FET

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi P-CHANNEL DIGITAL FET, Part Number FDV304P-F169. This P-channel MOSFET offers a Drain-to-Source Voltage (Vdss) of 25 V and a continuous drain current (Id) of 460mA at 25°C. With a maximum power dissipation of 350mW (Ta), this component features a low Rds On of 1.1 Ohm at 500mA and 4.5V. Gate charge (Qg) is 1.5 nC at 4.5V, and input capacitance (Ciss) is a maximum of 63 pF at 10V. The device operates over a temperature range of -55°C to 150°C and is housed in a SOT-23-3 surface mount package. Drive voltages are specified as 2.7V and 4.5V. This component is utilized across various industries including consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C460mA (Ta)
Rds On (Max) @ Id, Vgs1.1Ohm @ 500mA, 4.5V
FET Feature-
Power Dissipation (Max)350mW (Ta)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)2.7V, 4.5V
Vgs (Max)-8V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds63 pF @ 10 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy