FDV303N-F169
MOSFET N-CH 25V 680MA SOT23Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDV303N-F169 is an N-Channel MOSFET designed for high-density applications. This device features a drain-to-source voltage (Vdss) of 25 V and a continuous drain current (Id) of up to 680mA at 25°C, with a maximum power dissipation of 350mW. With an Rds On of 450mOhm at 500mA and 4.5V, it offers efficient switching characteristics. Key parameters include a gate charge (Qg) of 2.3 nC at 4.5V and input capacitance (Ciss) of 50 pF at 10V. The device operates across a temperature range of -55°C to 150°C and is housed in a SOT-23-3 (TO-236-3, SC-59) surface-mount package, supplied on tape and reel. This component is suitable for use in power management and switching applications across various industries.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 680mA (Ta) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 500mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 350mW (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs (Max) | 8V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 10 V |
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