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FDV301N-F169

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FDV301N-F169

MOSFET N-CH 25V 220MA SOT23

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi FDV301N-F169 is an N-Channel MOSFET with a Drain-Source Voltage (Vdss) of 25V. This component offers a continuous drain current (Id) of 220mA at 25°C ambient temperature and a maximum power dissipation of 350mW (Ta). The Rds On is specified at a maximum of 4 Ohms when driven at 4.5V with a drain current of 400mA. Key parameters include a typical Gate Charge (Qg) of 0.7 nC at 4.5V and an input capacitance (Ciss) of 9.5 pF at 10V. The device operates over a temperature range of -55°C to 150°C. It is packaged in a SOT-23-3 (TO-236-3, SC-59) surface mount configuration and supplied on tape and reel. This MOSFET is suitable for applications in various markets including industrial and consumer electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C220mA (Ta)
Rds On (Max) @ Id, Vgs4Ohm @ 400mA, 4.5V
FET Feature-
Power Dissipation (Max)350mW (Ta)
Vgs(th) (Max) @ Id1.06V @ 250µA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)2.7V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds9.5 pF @ 10 V

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