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FDV045P20L

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FDV045P20L

MOSFET P-CH 20V 1.15A SOT23-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi FDV045P20L is a P-Channel MOSFET designed for efficient switching applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 1.15A at 25°C. With a maximum power dissipation of 1.6W (Ta), it is suitable for space-constrained designs. The Rds On is specified at 108mOhm maximum at 1.15A and 4.5V Vgs. Optimized for surface mounting, it is provided in the SOT-23-3 package. The gate drive voltage range is from 1.8V to 4.5V, with a threshold voltage (Vgs(th)) of 1.5V at 250µA. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET finds application in areas such as battery management, power switching, and general-purpose analog circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C1.15A (Ta)
Rds On (Max) @ Id, Vgs108mOhm @ 1.15A, 4.5V
FET Feature-
Power Dissipation (Max)1.6W (Ta)
Vgs(th) (Max) @ Id1.5V @ 250µA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1220 pF @ 10 V

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