FDU8880
MOSFET N-CH 30V 13A/58A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDU8880 is an N-Channel PowerTrench® MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 30V and offers a continuous drain current of 13A at ambient temperature (Ta) and 58A at case temperature (Tc). With a maximum power dissipation of 55W (Tc) and a low on-resistance of 10mOhm at 35A and 10V Vgs, the FDU8880 is suitable for demanding power management tasks. Key parameters include a Gate Charge (Qg) of 31 nC (max) at 10V and an Input Capacitance (Ciss) of 1260 pF (max) at 15V. The MOSFET supports drive voltages ranging from 4.5V to 10V and has a threshold voltage (Vgs(th)) of 2.5V (max) at 250µA. Operating across a temperature range of -55°C to 175°C (TJ), it is housed in a TO-251-3, IPAK package for through-hole mounting. This device finds application in areas such as power supplies, battery management, and motor control.
Additional Information
Series: PowerTrench®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 58A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 55W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1260 pF @ 15 V |
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