FDU6N25
MOSFET N-CH 250V 4.4A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi UniFET™ N-Channel Power MOSFET, part number FDU6N25, is a through-hole component in an IPAK package (TO-251-3 Stub Leads). This device features a drain-source voltage of 250V and a continuous drain current of 4.4A at 25°C (Tc), with a maximum power dissipation of 50W (Tc). The Rds(on) is specified at 1.1 Ohm maximum at 2.2A and 10V gate-source voltage. Key parameters include a gate charge of 6 nC maximum at 10V and input capacitance of 250 pF maximum at 25V. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for applications in power supply, lighting, and motor control.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
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