FDU5N60NZTU
MOSFET N-CH 600V 4A DPAK3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDU5N60NZTU is a 600V N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a low Rds(on) of 2 Ohm maximum at 2A, 10V, facilitating reduced conduction losses. With a continuous drain current capability of 4A at 25°C (Tc) and a maximum power dissipation of 83W (Tc), it is suitable for demanding power conversion tasks. The FDU5N60NZTU utilizes MOSFET technology and is housed in a TO-251-3 Short Leads, IPAK, TO-251AA package, also known as DPAK3 (IPAK), for through-hole mounting. Key electrical parameters include a Vgs(th) of 5V at 250µA and a gate charge of 13 nC at 10V. This component finds application in power supplies, motor control, and lighting solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | DPAK3 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 25 V |
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