FDU5N50NZTU
MOSFET N-CH 500V 4A DPAK3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDU5N50NZTU is an N-Channel Power MOSFET designed for demanding applications. This component features a 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 4A at 25°C, with a maximum power dissipation of 62W (Tc). The Rds On is specified at 1.5 Ohm maximum at 2A, 10V, and the gate charge (Qg) is 12 nC at 10V. Input capacitance (Ciss) is 440 pF maximum at 25V. This through-hole device utilizes the DPAK3 (IPAK) package (TO-251-3 Short Leads, IPAK, TO-251AA) and operates across a junction temperature range of -55°C to 150°C. Its specifications make it suitable for use in power supplies, motor control, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | DPAK3 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 25 V |
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