FDU3N50NZTU
MOSFET N-CH 500V 2.5A DPAK3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDU3N50NZTU is an N-Channel Power MOSFET designed for demanding applications. This device features a 500V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 2.5A at 25°C (Tc). With a maximum power dissipation of 40W (Tc), it is suitable for power conversion circuits. The low on-resistance of 2.5 Ohms at 1.25A and 10V drive voltage, coupled with a gate charge (Qg) of 8 nC at 10V, contributes to efficient switching performance. It utilizes MOSFET technology and is housed in a TO-251-3 Short Leads, IPAK, or TO-251AA package, offering through-hole mounting. The operating temperature range is from -55°C to 150°C (TJ). This component finds application in power supplies, industrial motor control, and lighting solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 1.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | DPAK3 (IPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 25 V |