FDU3N40TU
MOSFET N-CH 400V 2A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi UniFET™ N-Channel Power MOSFET, FDU3N40TU, offers a 400V drain-source breakdown voltage and a continuous drain current of 2A at 25°C. This TO-251AA (IPAK) packaged device features a maximum Rds On of 3.4 Ohms at 1A and 10V gate-source voltage. With a gate charge of 6 nC and input capacitance of 225 pF at 25V, it is suitable for applications requiring efficient switching. The device supports a 10V drive voltage and has a maximum gate-source voltage of ±30V. Operating from -55°C to 150°C, this MOSFET has a maximum power dissipation of 30W. It finds application in power supply units and general-purpose switching.
Additional Information
Series: UniFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 25 V |
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