FDT86256
MOSFET N-CH 150V 1.2A/3A SOT223Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FDT86256 is a PowerTrench® N-Channel MOSFET designed for efficient power switching applications. This device features a drain-source voltage (Vdss) of 150V and offers continuous drain current capabilities of 1.2A at ambient temperature (Ta) and 3A at case temperature (Tc). With a maximum power dissipation of 2.3W (Ta) and 10W (Tc), it is suitable for demanding thermal environments. The Rds On is specified at a maximum of 845mOhm at 1.2A and 10V Vgs. Key parameters include a gate charge (Qg) of 2 nC (max) at 10V and input capacitance (Ciss) of 73 pF (max) at 75V. The FDT86256 is housed in a SOT-223-4 package (TO-261-4, TO-261AA) and is supplied on tape and reel. This component finds utility in various industries, including industrial and automotive power management systems.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta), 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 845mOhm @ 1.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.3W (Ta), 10W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 73 pF @ 75 V |
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